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DMG4N65CT
- Part Number:
- DMG4N65CT
- Manufacturer:
- Diodes Incorporated
- Description:
- MOSFET N CH 650V 4A TO220-3
- Lead Free Status:
- Contains lead / RoHS Compliant
- Stock Quantity:
- 48650 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- DMG4N65CT.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220-3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2A, 10V |
| Power Dissipation (Max): | 2.19W (Ta) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | DMG4N65CTDI |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Email: | [email protected] |
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