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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTD123ES,126
PDTD123ES,126
PDTD123ES,126
Part Number:
PDTD123ES,126
Manufacturer:
NXP Semiconductors / Freescale
Description:
TRANS PREBIAS NPN 500MW TO92-3
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
40647 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
PDTD123ES,126.pdf
Inquiry

Introduction

PDTD123ES,126 is available now! LYNTEAM Technology is the stocking distributor for PDTD123ES,126, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for PDTD123ES,126 by email, we will give you a best price according your plan.
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Our email: [email protected]

Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:TO-92-3
Series:-
Resistor - Emitter Base (R2):2.2 kOhms
Resistor - Base (R1):2.2 kOhms
Power - Max:500mW
Packaging:Tape & Box (TB)
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names:934059143126
PDTD123ES AMO
PDTD123ES AMO-ND
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):500mA
Base Part Number:PDTD123
Email:[email protected]

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