FDP4D5N10C
Part Number:
FDP4D5N10C
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
FET ENGR DEV-NOT REL
Stock Quantity:
34385 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
FDP4D5N10C.pdf

Introduction

FDP4D5N10C is available now! LYNTEAM Technology is the stocking distributor for FDP4D5N10C, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDP4D5N10C by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:4V @ 310µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 100A, 10V
Power Dissipation (Max):2.4W (Ta), 150W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status:Lead free
Input Capacitance (Ciss) (Max) @ Vds:5065pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:68nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:128A (Tc)
Email:[email protected]

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