FDP2D3N10C
Part Number:
FDP2D3N10C
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 100V 222A TO220-3
Stock Quantity:
59387 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
FDP2D3N10C.pdf

Introduction

FDP2D3N10C is available now! LYNTEAM Technology is the stocking distributor for FDP2D3N10C, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDP2D3N10C by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:4V @ 700µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:2.3 mOhm @ 100A, 10V
Power Dissipation (Max):214W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Manufacturer Standard Lead Time:22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:11180pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:152nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 222A (Tc) 214W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:222A (Tc)
Email:[email protected]

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