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FDD3510H
- Part Number:
- FDD3510H
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N/P-CH 80V 4.3A/2.8A DPAK
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 49042 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- FDD3510H.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Supplier Device Package: | TO-252-4L |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 4.3A, 10V |
| Power - Max: | 1.3W |
| Packaging: | Original-Reel® |
| Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Other Names: | FDD3510HDKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 7 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| FET Type: | N and P-Channel, Common Drain |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 80V |
| Detailed Description: | Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L |
| Current - Continuous Drain (Id) @ 25°C: | 4.3A, 2.8A |
| Email: | [email protected] |
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