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SSM6J216FE,LF
- Part Number:
- SSM6J216FE,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET P-CHANNEL 12V 4.8A ES6
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 40549 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SSM6J216FE,LF.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | ES6 |
| Series: | U-MOSVI |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 3.5A, 4.5V |
| Power Dissipation (Max): | 700mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | SSM6J216FE,LF(A SSM6J216FELF SSM6J216FELF(A SSM6J216FELF-ND SSM6J216FELFTR |
| Operating Temperature: | 150°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.7nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 12V |
| Detailed Description: | P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6 |
| Current - Continuous Drain (Id) @ 25°C: | 4.8A (Ta) |
| Email: | [email protected] |
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