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SSM6J512NU,LF
- Part Number:
- SSM6J512NU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET P-CH 12V 10A UDFN6B
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 52470 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SSM6J512NU,LF.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Vgs (Max): | ±10V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-UDFNB (2x2) |
| Series: | U-MOSVII |
| Rds On (Max) @ Id, Vgs: | 16.2 mOhm @ 4A, 8V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 6-WDFN Exposed Pad |
| Other Names: | SSM6J512NULFCT |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.5nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
| Drain to Source Voltage (Vdss): | 12V |
| Detailed Description: | P-Channel 12V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2) |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Email: | [email protected] |
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