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SI3443DDV-T1-GE3
- Part Number:
- SI3443DDV-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CHAN 20V TSOP6S
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 53902 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SI3443DDV-T1-GE3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Vgs (Max): | ±12V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-TSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 47 mOhm @ 4.5A, 4.5V |
| Power Dissipation (Max): | 1.7W (Ta), 2.7W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3443DDV-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 8V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta), 5.3A (Tc) |
| Email: | [email protected] |
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