RN4981FE,LF(CB
RN4981FE,LF(CB
Part Number:
RN4981FE,LF(CB
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS NPN/PNP PREBIAS 0.1W ES6
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
40747 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
RN4981FE,LF(CB.pdf

Introduction

RN4981FE,LF(CB is available now! LYNTEAM Technology is the stocking distributor for RN4981FE,LF(CB, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RN4981FE,LF(CB by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:ES6
Series:-
Resistor - Emitter Base (R2):4.7 kOhms
Resistor - Base (R1):4.7 kOhms
Power - Max:100mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RN4981FE(TE85L,F)
RN4981FE(TE85LF)TR
RN4981FE(TE85LF)TR-ND
RN4981FE,LF(CT
RN4981FELF(CBTR
RN4981FELF(CTTR
RN4981FELF(CTTR-ND
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 200MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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