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RCD041N25TL
- Part Number:
- RCD041N25TL
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 250V 4A CPT3
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 25922 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- RCD041N25TL.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | CPT3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1300 mOhm @ 2A, 10V |
| Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | RCD041N25TLCT |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 250V |
| Detailed Description: | N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Email: | [email protected] |
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