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2N2222AE3
- Part Number:
- 2N2222AE3
- Manufacturer:
- Microsemi
- Description:
- SMALL-SIGNAL BJT
- Lead Free Status:
- RoHS Compliant
- Stock Quantity:
- 37300 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- 2N2222AE3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Transistor Type: | NPN |
| Supplier Device Package: | TO-18 |
| Series: | - |
| RoHS Status: | RoHS Compliant |
| Power - Max: | 500mW |
| Package / Case: | TO-206AA, TO-18-3 Metal Can |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Frequency - Transition: | - |
| Detailed Description: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Current - Collector Cutoff (Max): | 50nA |
| Current - Collector (Ic) (Max): | 800mA |
| Email: | [email protected] |
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