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TK10J80E,S1E
- Part Number:
- TK10J80E,S1E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET N-CH 800V TO-3PN
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 44002 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- TK10J80E,S1E.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3P(N) |
| Series: | π-MOSVIII |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
| Power Dissipation (Max): | 250W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-3P-3, SC-65-3 |
| Other Names: | TK10J80E,S1E(S TK10J80ES1E |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Detailed Description: | N-Channel 800V 10A (Ta) 250W (Tc) Through Hole TO-3P(N) |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Email: | [email protected] |
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