SI3453DV-T1-GE3
Part Number:
SI3453DV-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CHANNEL 30V 3.4A 6TSOP
Stock Quantity:
42844 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
SI3453DV-T1-GE3.pdf

Introduction

SI3453DV-T1-GE3 is available now! LYNTEAM Technology is the stocking distributor for SI3453DV-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI3453DV-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:-
Rds On (Max) @ Id, Vgs:165 mOhm @ 2.5A, 10V
Power Dissipation (Max):3W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:155pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:P-Channel 30V 3.4A (Tc) 3W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
Email:[email protected]

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