RN1102MFV,L3F
RN1102MFV,L3F
Part Number:
RN1102MFV,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.15W VESM
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
35881 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
RN1102MFV,L3F.pdf

Introduction

RN1102MFV,L3F is available now! LYNTEAM Technology is the stocking distributor for RN1102MFV,L3F, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RN1102MFV,L3F by email, we will give you a best price according your plan.
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Our email: [email protected]

Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:VESM
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):10 kOhms
Power - Max:150mW
Packaging:Cut Tape (CT)
Package / Case:SOT-723
Other Names:RN1102MFV(TL3T)CT
RN1102MFV(TL3T)CT-ND
RN1102MFVL3F(BCT
RN1102MFVL3F(BCT-ND
RN1102MFVL3FCT
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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