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R6020ENZ1C9
- Part Number:
- R6020ENZ1C9
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 600V 20A TO247
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 55886 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- R6020ENZ1C9.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Test: | 1400pF @ 25V |
| Voltage - Breakdown: | TO-247 |
| Vgs(th) (Max) @ Id: | 196 mOhm @ 9.5A, 10V |
| Vgs (Max): | 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | - |
| RoHS Status: | Tube |
| Rds On (Max) @ Id, Vgs: | 20A (Tc) |
| Polarization: | TO-247-3 |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 17 Weeks |
| Manufacturer Part Number: | R6020ENZ1C9 |
| Input Capacitance (Ciss) (Max) @ Vds: | 60nC @ 10V |
| IGBT Type: | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 4V @ 1mA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 600V 20A (Tc) 120W (Tc) Through Hole TO-247 |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 600V 20A TO247 |
| Current - Continuous Drain (Id) @ 25°C: | 600V |
| Capacitance Ratio: | 120W (Tc) |
| Email: | [email protected] |
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