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NJVMJD112G
- Part Number:
- NJVMJD112G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 100V 2A DPAK-4
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 31010 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- NJVMJD112G.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | DPAK |
| Series: | - |
| Power - Max: | 1.75W |
| Packaging: | Tube |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 5 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 25MHz |
| Detailed Description: | Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
| Current - Collector Cutoff (Max): | 20µA |
| Current - Collector (Ic) (Max): | 2A |
| Email: | [email protected] |
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