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IPB039N10N3GE8187ATMA1
- Part Number:
- IPB039N10N3GE8187ATMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 100V 160A TO263-7
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 22494 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- IPB039N10N3GE8187ATMA1.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 3.5V @ 160µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO263-7 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 214W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Other Names: | IPB039N10N3 G E8187 IPB039N10N3 G E8187-ND IPB039N10N3 G E8187TR-ND IPB039N10N3GE8187ATMA1TR SP000939340 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 8410pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7 |
| Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
| Email: | [email protected] |
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