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HN3C10FUTE85LF
- Part Number:
- HN3C10FUTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANSISTOR NPN US6
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 28574 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- HN3C10FUTE85LF.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 12V |
| Transistor Type: | 2 NPN (Dual) |
| Supplier Device Package: | US6 |
| Series: | - |
| Power - Max: | 200mW |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Other Names: | HN3C10FUTE85LFCT |
| Operating Temperature: | - |
| Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gain: | 11.5dB |
| Frequency - Transition: | 7GHz |
| Detailed Description: | RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max): | 80mA |
| Email: | [email protected] |
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