EPC2106 is available now! LYNTEAM Technology is the stocking distributor for EPC2106, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2106 by email, we will give you a best price according your plan.
Buy EPC2106 with LYNTEAM, save your money and time.
Our email: [email protected]
EPC2106
- Part Number:
- EPC2106
- Manufacturer:
- EPC
- Description:
- TRANS GAN SYM 100V BUMPED DIE
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 35009 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- EPC2106.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 5V |
| Power - Max: | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | Die |
| Other Names: | 917-1110-2 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.73nC @ 5V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A |
| Email: | [email protected] |
Related parts for EPC2106
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
EPC2104ENG | EPC | TRANS GAN 2N-CH 100V BUMPED DIE | Inquiry |
 |
EPC2105 | EPC | TRANS GAN ASYMMETRICAL HALF BRID | Inquiry |
|
EPC2103 | EPC | TRANS GAN SYMMETRICAL HALF BRIDG | Inquiry |
|
EPC2105ENG | EPC | TRANS GAN 2N-CH 80V BUMPED DIE | Inquiry |
 |
EPC2112ENGRT | EPC | 200 V GAN IC FET DRIVER | Inquiry |
|
EPC2104 | EPC | TRANS GAN SYMMETRICAL HALF BRIDG | Inquiry |
 |
EPC2107ENGRT | EPC | TRANS GAN 3N-CH 100V BUMPED DIE | Inquiry |
|
EPC2108 | EPC | MOSFET 3 N-CH 60V/100V 9BGA | Inquiry |
 |
EPC2106ENGRT | EPC | TRANS GAN 2N-CH 100V BUMPED DIE | Inquiry |
 |
EPC2110 | EPC | MOSFET 2NCH 120V 3.4A DIE | Inquiry |
|
EPC2103ENG | EPC | TRANS GAN 2N-CH 80V BUMPED DIE | Inquiry |
|
EPC2102ENGRT | EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | Inquiry |
|
EPC2107 | EPC | MOSFET 3 N-CH 100V 9BGA | Inquiry |
|
EPC2108ENGRT | EPC | TRANS GAN 3N-CH BUMPED DIE | Inquiry |
|
EPC2105ENGRT | EPC | MOSFET 2NCH 80V 9.5A DIE | Inquiry |
|
EPC2110ENGRT | EPC | TRANS GAN 2N-CH 120V BUMPED DIE | Inquiry |
 |
EPC2111 | EPC | TRANS GAN ASYMMETRICAL HALF BRID | Inquiry |
|
EPC2103ENGRT | EPC | TRANS GAN SYM HALF BRDG 80V | Inquiry |
|
EPC2111ENGRT | EPC | TRANS GAN ASYMMETRICAL HALF BRID | Inquiry |
|
EPC2104ENGRT | EPC | MOSFET 2NCH 100V 23A DIE | Inquiry |
Latest News
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- The first quarter financial report of the SEF semiconductor (ST) decreases, and the demand for automobiles has slowed down
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- Local mature chip volume, Samsung NAND flash memory production capacity near load
- Vishay launches miniled packaging high brightness small blue and pure green LED
- Ansonmei launched an inductive position sensor for the industrial and transportation market
- Ruisa starts the old factory to increase the power device, the earthquake affects DRAM output mild
- Microchip enables the production capacity of TSMC and increases price increases
- Ruisa launched the new RA0 series ultra -low power entry -level MCU
- Melexis launches a full -integrated inductor switch chip
- X-FAB introduces image sensor back illumination technology to enhance CMOS sensor performance