ULN2803APG,CN
Part Number:
ULN2803APG,CN
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 8NPN DARL 50V 0.5A 18DIP
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
40550 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
ULN2803APG,CN.pdf

Introduction

ULN2803APG,CN is available now! LYNTEAM Technology is the stocking distributor for ULN2803APG,CN, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for ULN2803APG,CN by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Transistor Type:8 NPN Darlington
Supplier Device Package:18-DIP
Series:-
Power - Max:1.47W
Packaging:Tube
Package / Case:18-DIP (0.300", 7.62mm)
Other Names:ULN2803APG
ULN2803APG(5,M)
ULN2803APG(CNHZN)
ULN2803APG(CNHZN)-ND
ULN2803APG(O,M)
ULN2803APG(O,N,HZA
ULN2803APG(O,N,HZN
ULN2803APG(OM)
ULN2803APG(OM)-ND
ULN2803APG(ONHZA
ULN2803APG(ONHZA-ND
ULN2803APG(ONHZN
ULN2803APG(ONHZN-ND
ULN2803APG-ND
ULN2803APGCN
ULN2803APGONHZN
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
Current - Collector Cutoff (Max):-
Current - Collector (Ic) (Max):500mA
Base Part Number:ULN280*A
Email:[email protected]

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