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TPW1R306PL,L1Q
- Part Number:
- TPW1R306PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- X35 PB-F POWER MOSFET TRANSISTOR
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 24861 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- TPW1R306PL,L1Q.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-DSOP Advance |
| Series: | U-MOSIX-H |
| Rds On (Max) @ Id, Vgs: | 1.29 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 960mW (Ta), 170W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | TPW1R306PL,L1Q(M TPW1R306PLL1QTR |
| Operating Temperature: | 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 8100pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance |
| Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
| Email: | [email protected] |
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