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TC58BYG2S0HBAI6
- Part Number:
- TC58BYG2S0HBAI6
- Manufacturer:
- Toshiba Memory America, Inc.
- Description:
- IC FLASH 4G PARALLEL 67VFBGA
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 30976 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- TC58BYG2S0HBAI6.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Write Cycle Time - Word, Page: | 25ns |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Technology: | FLASH - NAND (SLC) |
| Supplier Device Package: | 67-VFBGA (6.5x8) |
| Series: | Benand™ |
| Packaging: | Tray |
| Package / Case: | 67-VFBGA |
| Other Names: | TC58BYG2S0HBAI6JDH TC58BYG2S0HBAI6YCL |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Memory Type: | Non-Volatile |
| Memory Size: | 4Gb (512M x 8) |
| Memory Interface: | Parallel |
| Memory Format: | FLASH |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8) |
| Access Time: | 25ns |
| Email: | [email protected] |
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