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SQM120N10-3M8_GE3
- Part Number:
- SQM120N10-3M8_GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 100V 120A TO263
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 30426 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SQM120N10-3M8_GE3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-263 (D²Pak) |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 375W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | SQM120N10-3M8_GE3TR |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 7230pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak) |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Email: | [email protected] |
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