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NTD4809NH-1G
- Part Number:
- NTD4809NH-1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 30V 9A IPAK
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 21456 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- NTD4809NH-1G.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | I-PAK |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
| Email: | [email protected] |
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