JAN2N3418S is available now! LYNTEAM Technology is the stocking distributor for JAN2N3418S, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN2N3418S by email, we will give you a best price according your plan.
Buy JAN2N3418S with LYNTEAM, save your money and time.
Our email: [email protected]
JAN2N3418S
- Part Number:
- JAN2N3418S
- Manufacturer:
- Microsemi
- Description:
- TRANS NPN 60V 3A
- Lead Free Status:
- Contains lead / RoHS non-compliant
- Stock Quantity:
- 26745 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- JAN2N3418S.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
| Transistor Type: | NPN |
| Supplier Device Package: | TO-39 |
| Series: | Military, MIL-PRF-19500/393 |
| Power - Max: | 1W |
| Packaging: | Bulk |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Other Names: | 1086-20794 1086-20794-MIL |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 22 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Frequency - Transition: | - |
| Detailed Description: | Bipolar (BJT) Transistor NPN 60V 3A 1W Through Hole TO-39 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 2V |
| Current - Collector Cutoff (Max): | 5µA |
| Current - Collector (Ic) (Max): | 3A |
| Email: | [email protected] |
Related parts for JAN2N3418S
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
JAN2N3055 | Microsemi | TRANS NPN 70V 15A TO-3 | Inquiry |
|
JAN2N335 | Microsemi | TRANS NPN 45V 10MA | Inquiry |
 |
JAN2N3057A | Microsemi | TRANS NPN 80V 1A TO46 | Inquiry |
|
JAN2N3441 | Microsemi | TRANS NPN 140V 3A TO-66 | Inquiry |
|
JAN2N3420S | Microsemi | TRANS NPN 60V 3A | Inquiry |
 |
JAN2N3440 | Microsemi | TRANS NPN 250V 1A | Inquiry |
|
JAN2N3250A | Microsemi | TRANS PNP 60V 0.2A TO-39 | Inquiry |
|
JAN2N3421S | Microsemi | TRANS NPN 80V 3A TO39 | Inquiry |
|
JAN2N2946A | Microsemi | TRANS PNP 35V 0.1A TO46 | Inquiry |
|
JAN2N3019 | Microsemi | TRANS NPN 80V 1A TO39 | Inquiry |
|
JAN2N3419S | Microsemi | TRANS NPN 80V 3A | Inquiry |
|
JAN2N3418 | Microsemi | TRANS NPN 60V 3A | Inquiry |
|
JAN2N3019S | Microsemi | TRANS NPN 80V 1A | Inquiry |
 |
JAN2N3440L | Microsemi | TRANS NPN 250V 1A TO5 | Inquiry |
|
JAN2N3251AUB | Microsemi | TRANS PNP 60V 0.2A TO-39 | Inquiry |
|
JAN2N3439 | Microsemi | TRANS NPN 350V 1A | Inquiry |
|
JAN2N3419 | Microsemi | TRANS NPN 80V 3A | Inquiry |
|
JAN2N3439L | Microsemi | TRANS NPN 350V 1A | Inquiry |
|
JAN2N3420 | Microsemi | TRANS NPN 60V 3A | Inquiry |
|
JAN2N3251A | Microsemi | TRANS PNP 60V 0.2A TO-39 | Inquiry |
Latest News
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- The first quarter financial report of the SEF semiconductor (ST) decreases, and the demand for automobiles has slowed down
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- Local mature chip volume, Samsung NAND flash memory production capacity near load
- Vishay launches miniled packaging high brightness small blue and pure green LED
- Ansonmei launched an inductive position sensor for the industrial and transportation market
- Ruisa starts the old factory to increase the power device, the earthquake affects DRAM output mild
- Microchip enables the production capacity of TSMC and increases price increases
- Ruisa launched the new RA0 series ultra -low power entry -level MCU
- Melexis launches a full -integrated inductor switch chip
- X-FAB introduces image sensor back illumination technology to enhance CMOS sensor performance