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HN1B01FU-GR,LF
- Part Number:
- HN1B01FU-GR,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANS NPN/PNP 50V 0.15A US6-PLN
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 22706 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- HN1B01FU-GR,LF.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
| Transistor Type: | NPN, PNP |
| Supplier Device Package: | US6 |
| Series: | - |
| Power - Max: | 200mW, 210mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Other Names: | HN1B01FU-GR(L,F,T) HN1B01FU-GR,LF(B HN1B01FU-GR,LF(T HN1B01FU-GRLF HN1B01FU-GRLF-ND HN1B01FU-GRLFTR HN1B01FUGRLFT HN1B01FUGRLFTTR HN1B01FUGRLFTTR-ND |
| Operating Temperature: | 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 150MHz |
| Detailed Description: | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 150mA |
| Email: | [email protected] |
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