FQB8N90CTM
FQB8N90CTM
Part Number:
FQB8N90CTM
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 900V 6.3A D2PAK
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
53808 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
FQB8N90CTM.pdf

Introduction

FQB8N90CTM is available now! LYNTEAM Technology is the stocking distributor for FQB8N90CTM, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQB8N90CTM by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3.15A, 10V
Power Dissipation (Max):171W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FQB8N90CTMCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900V
Detailed Description:N-Channel 900V 6.3A (Tc) 171W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:6.3A (Tc)
Email:[email protected]

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