1N8035-GA is available now! LYNTEAM Technology is the stocking distributor for 1N8035-GA, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N8035-GA by email, we will give you a best price according your plan.
Buy 1N8035-GA with LYNTEAM, save your money and time.
Our email: [email protected]
1N8035-GA
- Part Number:
- 1N8035-GA
- Manufacturer:
- GeneSiC Semiconductor
- Description:
- DIODE SCHOTTKY 650V 14.6A TO276
- Lead Free Status:
- Contains lead / RoHS non-compliant
- Stock Quantity:
- 22032 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- 1N8035-GA.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 15A |
| Voltage - DC Reverse (Vr) (Max): | 650V |
| Supplier Device Package: | TO-276 |
| Speed: | No Recovery Time > 500mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 0ns |
| Packaging: | Tube |
| Package / Case: | TO-276AA |
| Other Names: | 1242-1122 1N8035GA |
| Operating Temperature - Junction: | -55°C ~ 250°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Diode Type: | Silicon Carbide Schottky |
| Detailed Description: | Diode Silicon Carbide Schottky 650V 14.6A (DC) Surface Mount TO-276 |
| Current - Reverse Leakage @ Vr: | 5µA @ 650V |
| Current - Average Rectified (Io): | 14.6A (DC) |
| Capacitance @ Vr, F: | 1107pF @ 1V, 1MHz |
| Base Part Number: | 1N8035 |
| Email: | [email protected] |
Related parts for 1N8035-GA
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
1N8032-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | Inquiry |
|
1N8028-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | Inquiry |
 |
1N821AUR-1 | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Inquiry |
|
1N821UR-1 | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Inquiry |
 |
1N823-1 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N821A | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N823 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
 |
1N8033-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | Inquiry |
|
1N821A, SEL. 1% VBR | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N822 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N8034-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | Inquiry |
|
1N8024-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | Inquiry |
|
1N8031-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | Inquiry |
|
1N8026-GA | GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | Inquiry |
|
1N821 | Microsemi | DIODE ZENER DO35 | Inquiry |
|
1N821-1 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N821AUR | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Inquiry |
|
1N821A (DO35) | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N823A | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Inquiry |
|
1N8030-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | Inquiry |
Latest News
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- The first quarter financial report of the SEF semiconductor (ST) decreases, and the demand for automobiles has slowed down
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- Local mature chip volume, Samsung NAND flash memory production capacity near load
- Vishay launches miniled packaging high brightness small blue and pure green LED
- Ansonmei launched an inductive position sensor for the industrial and transportation market
- Ruisa starts the old factory to increase the power device, the earthquake affects DRAM output mild
- Microchip enables the production capacity of TSMC and increases price increases
- Ruisa launched the new RA0 series ultra -low power entry -level MCU
- Melexis launches a full -integrated inductor switch chip
- X-FAB introduces image sensor back illumination technology to enhance CMOS sensor performance