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SIHG33N65E-GE3
- Part Number:
- SIHG33N65E-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 650V 32.4A TO-247AC
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 57289 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SIHG33N65E-GE3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-247AC |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 16.5A, 10V |
| Power Dissipation (Max): | 313W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | TO-247-3 |
| Other Names: | SIHG33N65E-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 20 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4040pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC |
| Current - Continuous Drain (Id) @ 25°C: | 32.4A (Tc) |
| Email: | [email protected] |
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