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SI2342DS-T1-GE3
- Part Number:
- SI2342DS-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 8V 6A SOT-23
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 29669 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- SI2342DS-T1-GE3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Test: | 1070pF @ 4V |
| Voltage - Breakdown: | SOT-23 |
| Vgs(th) (Max) @ Id: | 17 mOhm @ 7.2A, 4.5V |
| Vgs (Max): | 1.2V, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 6A (Tc) |
| Polarization: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SI2342DS-T1-GE3-ND SI2342DS-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI2342DS-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 15.8nC @ 4.5V |
| IGBT Type: | ±5V |
| Gate Charge (Qg) (Max) @ Vgs: | 800mV @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23 |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 8V 6A SOT-23 |
| Current - Continuous Drain (Id) @ 25°C: | 8V |
| Capacitance Ratio: | 1.3W (Ta), 2.5W (Tc) |
| Email: | [email protected] |
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