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RN1130MFV,L3F
- Part Number:
- RN1130MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANS PREBIAS NPN 0.15W VESM
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 51749 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- RN1130MFV,L3F.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | VESM |
| Series: | - |
| Resistor - Emitter Base (R2): | 100 kOhms |
| Resistor - Base (R1): | 100 kOhms |
| Power - Max: | 150mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-723 |
| Other Names: | RN1130MFV(TL3,T) RN1130MFV(TL3T)TR RN1130MFV(TL3T)TR-ND RN1130MFV,L3F(B RN1130MFV,L3F(T RN1130MFVL3F RN1130MFVL3F-ND RN1130MFVL3FTR RN1130MFVTL3T |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 250MHz |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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