PMZB370UNE,315 is available now! LYNTEAM Technology is the stocking distributor for PMZB370UNE,315, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for PMZB370UNE,315 by email, we will give you a best price according your plan.
Buy PMZB370UNE,315 with LYNTEAM, save your money and time.
Our email: [email protected]
PMZB370UNE,315
- Part Number:
- PMZB370UNE,315
- Manufacturer:
- Nexperia
- Description:
- MOSFET N-CH 30V 0.9A DFN1006B-3
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 22743 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- PMZB370UNE,315.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 1.05V @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | DFN1006B-3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 490 mOhm @ 500mA, 4.5V |
| Power Dissipation (Max): | 360mW (Ta), 2.7W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 3-XFDFN |
| Other Names: | 1727-1379-2 568-10842-2 568-10842-2-ND 934065874315 PMZB370UNE,315-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 78pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.16nC @ 15V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3 |
| Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
| Email: | [email protected] |
Related parts for PMZB370UNE,315
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
PMZB150UNEYL | Nexperia | MOSFET N-CH 20V SOT883 | Inquiry |
|
PMZB550UNEYL | Nexperia | MOSFET N-CH 30V SOT883 | Inquiry |
|
PMZB290UNE,315 | Nexperia | MOSFET N-CH 20V 1A DFN1006B-3 | Inquiry |
|
PMZB350UPE,315 | Nexperia | MOSFET P-CH 20V 1A 3DFN | Inquiry |
|
PMZB950UPELYL | Nexperia | MOSFET P-CH 20V 500MA 3DFN1006B | Inquiry |
|
PMZB200UNEYL | Nexperia | MOSFET N-CH 30V SOT883 | Inquiry |
|
PMZB320UPEYL | Nexperia | MOSFET P-CH 30V SOT883 | Inquiry |
|
PMZB380XN,315 | Nexperia | MOSFET N-CH 30V SGL 3DFN | Inquiry |
|
PMZB290UNE2YL | Nexperia | MOSFET N-CH 20V 1.2A XQFN3 | Inquiry |
|
PMZB600UNEYL | Nexperia | MOSFET N-CH 20V 3QFN | Inquiry |
|
PMZB390UNEYL | Nexperia | MOSFET N-CH 30V SGL XQFN3 | Inquiry |
|
PMZB420UN,315 | Nexperia | MOSFET N-CH 30V SGL 3DFN | Inquiry |
|
PMZB300XN,315 | Nexperia | MOSFET N-CH 20V 1A 3DFN | Inquiry |
|
PMZB290UN,315 | Nexperia | MOSFET N-CH 20V 1A 3DFN | Inquiry |
|
PMZB1200UPEYL | Nexperia | MOSFET P-CH 30V SOT883 | Inquiry |
|
PMZB600UNELYL | Nexperia | MOSFET N-CH 20V 600MA 3DFN1006B | Inquiry |
|
PMZB790SN,315 | Nexperia | MOSFET N-CH 60V SGL 3DFN | Inquiry |
 |
PMZ950UPEYL | Nexperia | MOSFET P-CH 20V 0.5A XQFN3 | Inquiry |
|
PMZB950UPEYL | Nexperia | MOSFET P-CH 20V 3QFN | Inquiry |
|
PMZB670UPE,315 | Nexperia | MOSFET P-CH 20V 680MA DFN1006B-3 | Inquiry |
Latest News
- It is rumored that Samsung and SK Hynix stopped DDR3, and the promotion quotation rose by 20 %
- MELEXIS released MLX90427: line control to new choice, safe, efficient and economical
- NXP and Ansonmei's financial report announced, and the price of copper prices is transmitted to the IC industry
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- The first quarter financial report of the SEF semiconductor (ST) decreases, and the demand for automobiles has slowed down
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- Local mature chip volume, Samsung NAND flash memory production capacity near load
- Vishay launches miniled packaging high brightness small blue and pure green LED
- Ansonmei launched an inductive position sensor for the industrial and transportation market
- Ruisa starts the old factory to increase the power device, the earthquake affects DRAM output mild
- Microchip enables the production capacity of TSMC and increases price increases