FDN5618P_G
Part Number:
FDN5618P_G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
INTEGRATED CIRCUIT
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
24757 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
FDN5618P_G.pdf

Introduction

FDN5618P_G is available now! LYNTEAM Technology is the stocking distributor for FDN5618P_G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDN5618P_G by email, we will give you a best price according your plan.
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Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SuperSOT-3
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:170 mOhm @ 1.25A, 10V
Power Dissipation (Max):500mW (Ta)
Packaging:Bulk
Package / Case:TO-236-3, SC-59, SOT-23-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:430pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:13.8nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
Email:[email protected]

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