FQB34P10TM-F085
FQB34P10TM-F085
Part Number:
FQB34P10TM-F085
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 100V 33.5A D2PAK
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
52160 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
FQB34P10TM-F085.pdf

Introduction

FQB34P10TM-F085 is available now! LYNTEAM Technology is the stocking distributor for FQB34P10TM-F085, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQB34P10TM-F085 by email, we will give you a best price according your plan.
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Our email: [email protected]

Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:Automotive, AEC-Q101, QFET®
Rds On (Max) @ Id, Vgs:60 mOhm @ 16.75A, 10V
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FQB34P10TM-F085TR
FQB34P10TM_F085
FQB34P10TM_F085P
FQB34P10TM_F085TR
FQB34P10TM_F085TR-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Email:[email protected]

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