SIE818DF-T1-GE3
SIE818DF-T1-GE3
Part Number:
SIE818DF-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 75V 60A POLARPAK
Lead Free Status:
Lead free / RoHS Compliant
Stock Quantity:
34069 Pieces
Delivery Time:
1-2 days
Lead time:
4-8 weeks
Data sheet:
SIE818DF-T1-GE3.pdf

Introduction

SIE818DF-T1-GE3 is available now! LYNTEAM Technology is the stocking distributor for SIE818DF-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIE818DF-T1-GE3 by email, we will give you a best price according your plan.
Buy SIE818DF-T1-GE3 with LYNTEAM, save your money and time.
Our email: [email protected]

Specifications

Condition New & Original, tested
Country of origin Contact us
Marking Code Send by email
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:10-PolarPAK® (L)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 16A, 10V
Power Dissipation (Max):5.2W (Ta), 125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:10-PolarPAK® (L)
Other Names:SIE818DF-T1-GE3TR
SIE818DFT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3200pF @ 38V
Gate Charge (Qg) (Max) @ Vgs:95nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):75V
Detailed Description:N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments