RF4E110BNTR is available now! LYNTEAM Technology is the stocking distributor for RF4E110BNTR, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RF4E110BNTR by email, we will give you a best price according your plan.
Buy RF4E110BNTR with LYNTEAM, save your money and time.
Our email: [email protected]
RF4E110BNTR
- Part Number:
- RF4E110BNTR
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 30V 11A 8-HUML
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 45522 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- 1.RF4E110BNTR.pdf2.RF4E110BNTR.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | HUML2020L8 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 11.1 mOhm @ 11A, 10V |
| Power Dissipation (Max): | 2W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerUDFN |
| Other Names: | RF4E110BNTRTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 40 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8 |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Email: | [email protected] |
Related parts for RF4E110BNTR
Latest News
- ARM appeared in computex 2024: It is expected that more than 100 billion ARM devices can be used for AI by the end of 2025
- Qorvo launched the industry's outstanding high -gain 5G MMIMO preliminaries
- Simulation cycle inventory bottoming out, AI drives flash memory demand continues
- Micron's plan to build a factory, NAND flash memory at high prices or maintenance
- ADI performance is reduced, copper foil substrates have risen, storage of original factory increase production conservative
- The wave of intelligence in the car is coming, and Aimus Oslang helped Sagita Juguang release the MX lidar
- HBM production capacity is excluded, DRAM memory may be in short supply in the second half of the year
- Wall founders will end, HBM or cause DRAM to rise again
- AI mobile phone and PC expansion demand, global semiconductor manufacturing industry improvement
- Understand the needs of ADAS and cabin monitoring systems for network security image sensors
- It is rumored that Samsung and SK Hynix stopped DDR3, and the promotion quotation rose by 20 %
- MELEXIS released MLX90427: line control to new choice, safe, efficient and economical