NTMFS4943NT1G is available now! LYNTEAM Technology is the stocking distributor for NTMFS4943NT1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTMFS4943NT1G by email, we will give you a best price according your plan.
Buy NTMFS4943NT1G with LYNTEAM, save your money and time.
Our email: [email protected]
NTMFS4943NT1G
- Part Number:
- NTMFS4943NT1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 30V 8.3A SO8FL
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 27511 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- NTMFS4943NT1G.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 910mW (Ta), 22.3W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Other Names: | NTMFS4943NT1GOSCT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1401pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 20.9nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 8.3A (Ta), 41A (Tc) 910mW (Ta), 22.3W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) |
| Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta), 41A (Tc) |
| Email: | [email protected] |
Related parts for NTMFS4943NT1G
Latest News
- Micron's plan to build a factory, NAND flash memory at high prices or maintenance
- ADI performance is reduced, copper foil substrates have risen, storage of original factory increase production conservative
- The wave of intelligence in the car is coming, and Aimus Oslang helped Sagita Juguang release the MX lidar
- HBM production capacity is excluded, DRAM memory may be in short supply in the second half of the year
- Wall founders will end, HBM or cause DRAM to rise again
- AI mobile phone and PC expansion demand, global semiconductor manufacturing industry improvement
- Understand the needs of ADAS and cabin monitoring systems for network security image sensors
- It is rumored that Samsung and SK Hynix stopped DDR3, and the promotion quotation rose by 20 %
- MELEXIS released MLX90427: line control to new choice, safe, efficient and economical
- NXP and Ansonmei's financial report announced, and the price of copper prices is transmitted to the IC industry
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products