DMN90H2D2HCTI is available now! LYNTEAM Technology is the stocking distributor for DMN90H2D2HCTI, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for DMN90H2D2HCTI by email, we will give you a best price according your plan.
Buy DMN90H2D2HCTI with LYNTEAM, save your money and time.
Our email: [email protected]
DMN90H2D2HCTI
- Part Number:
- DMN90H2D2HCTI
- Manufacturer:
- Diodes Incorporated
- Description:
- MOSFET N-CH 900V 6A ITO220AB
- Lead Free Status:
- Contains lead / RoHS Compliant
- Stock Quantity:
- 56905 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- DMN90H2D2HCTI.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | ITO-220AB |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 3A, 10V |
| Power Dissipation (Max): | 40W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Other Names: | DMN90H2D2HCTI-ND DMN90H2D2HCTIDI |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | Not Applicable |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1487pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 20.3nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 900V |
| Detailed Description: | N-Channel 900V 6A (Tc) 40W (Tc) Through Hole ITO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Email: | [email protected] |
Related parts for DMN90H2D2HCTI
Latest News
- Qorvo launched the industry's outstanding high -gain 5G MMIMO preliminaries
- Simulation cycle inventory bottoming out, AI drives flash memory demand continues
- Micron's plan to build a factory, NAND flash memory at high prices or maintenance
- ADI performance is reduced, copper foil substrates have risen, storage of original factory increase production conservative
- The wave of intelligence in the car is coming, and Aimus Oslang helped Sagita Juguang release the MX lidar
- HBM production capacity is excluded, DRAM memory may be in short supply in the second half of the year
- Wall founders will end, HBM or cause DRAM to rise again
- AI mobile phone and PC expansion demand, global semiconductor manufacturing industry improvement
- Understand the needs of ADAS and cabin monitoring systems for network security image sensors
- It is rumored that Samsung and SK Hynix stopped DDR3, and the promotion quotation rose by 20 %
- MELEXIS released MLX90427: line control to new choice, safe, efficient and economical
- NXP and Ansonmei's financial report announced, and the price of copper prices is transmitted to the IC industry