DFEG12060D-2R2M=P3 is available now! LYNTEAM Technology is the stocking distributor for DFEG12060D-2R2M=P3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for DFEG12060D-2R2M=P3 by email, we will give you a best price according your plan.
Buy DFEG12060D-2R2M=P3 with LYNTEAM, save your money and time.
Our email: [email protected]
DFEG12060D-2R2M=P3
- Part Number:
- DFEG12060D-2R2M=P3
- Manufacturer:
- Murata Electronics
- Description:
- FIXED IND 2.2UH 16A 4.4 MOHM
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 39247 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- DFEG12060D-2R2M=P3.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Voltage - Breakdown: | - |
| Usage: | Shielded |
| Type: | - |
| Size / Dimension: | 0.512" L x 0.496" W (13.00mm x 12.60mm) |
| Series: | DFEG12060D |
| RoHS Status: | Digi-Reel® |
| Ratings: | AEC-Q200 |
| Polarization: | Nonstandard |
| Other Names: | 490-13072-6 |
| Operating Temperature: | -40°C ~ 125°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 13 Weeks |
| Manufacturer Part Number: | DFEG12060D-2R2M=P3 |
| Height - Seated (Max): | 0.236" (6.00mm) |
| Hardware Type: | 2.2µH |
| Frequency - Test: | - |
| Frequency - Self Resonant: | 4.4 mOhm Max |
| Expanded Description: | 2.2µH Shielded Inductor 16A 4.4 mOhm Max Nonstandard |
| ESR (Equivalent Series Resistance): | ±20% |
| Diameter - Shoulder: | - |
| Description: | FIXED IND 2.2UH 16A 4.4 MOHM |
| Delay Time: | 100kHz |
| DC Resistance (DCR): | 21A |
| Current Rating: | 16A |
| Current - Saturation: | Powdered Iron |
| Email: | [email protected] |
Related parts for DFEG12060D-2R2M=P3
Latest News
- HBM production capacity is excluded, DRAM memory may be in short supply in the second half of the year
- Wall founders will end, HBM or cause DRAM to rise again
- AI mobile phone and PC expansion demand, global semiconductor manufacturing industry improvement
- Understand the needs of ADAS and cabin monitoring systems for network security image sensors
- It is rumored that Samsung and SK Hynix stopped DDR3, and the promotion quotation rose by 20 %
- MELEXIS released MLX90427: line control to new choice, safe, efficient and economical
- NXP and Ansonmei's financial report announced, and the price of copper prices is transmitted to the IC industry
- Moels Micro Electronics has set up a new offices in Taiwan, China to expand business territory
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- The first quarter financial report of the SEF semiconductor (ST) decreases, and the demand for automobiles has slowed down
- The performance of Texas instruments is still to be boosted, and the two storage factories push new flash memory products
- Local mature chip volume, Samsung NAND flash memory production capacity near load