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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Single > TK12A60U(Q,M)
TK12A60U(Q,M)
TK12A60U(Q,M)
Varenummer:
TK12A60U(Q,M)
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
MOSFET N-CH 600V 12A TO220SIS
Blyfri status:
Blyfri / RoHS-kompatibel
Lager Antal:
23602 Pieces
Leveringstid:
1-2 days
Blytid:
4-8 weeks
Datablad:
1.TK12A60U(Q,M).pdf2.TK12A60U(Q,M).pdf
Forespørgsel

Introduktion

TK12A60U(Q,M) er tilgængelig nu!LYNTEAM Teknologi er den strømforhandler for TK12A60U(Q,M), vi har lagrene for øjeblikkelig forsendelse og også tilgængelig i lang tid.Venligst send os din købsplan for TK12A60U(Q,M) via e-mail, vi vil give dig en bedste pris efter din plan.
Køb TK12A60U(Q,M) med LYNTEAM, gem dine penge og tid.
Vores email: [email protected]

specifikationer

Tilstand New & Original, tested
Oprindelsesland Contact us
Mærkningskode Send by email
Vgs (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-220SIS
Serie:DTMOSII
Rds On (Max) @ Id, Vgs:400 mOhm @ 6A, 10V
Power Dissipation (Max):35W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-220-3 Full Pack
Andre navne:TK12A60U(Q)
TK12A60U(Q)-ND
TK12A60U(QM)
TK12A60UQ-ND
TK12A60UQM
Driftstemperatur:150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:720pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):600V
Detaljeret beskrivelse:N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:12A (Ta)
Email:[email protected]

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