GP1M009A060FH is available now! LYNTEAM Technology is the stocking distributor for GP1M009A060FH, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for GP1M009A060FH by email, we will give you a best price according your plan.
Buy GP1M009A060FH with LYNTEAM, save your money and time.
Our email: [email protected]
GP1M009A060FH
- Part Number:
- GP1M009A060FH
- Manufacturer:
- Global Power Technologies Group
- Description:
- MOSFET N-CH 600V 9A TO220F
- Lead Free Status:
- Lead free / RoHS Compliant
- Stock Quantity:
- 59256 Pieces
- Delivery Time:
- 1-2 days
- Lead time:
- 4-8 weeks
- Data sheet:
- GP1M009A060FH.pdf
Introduction
Specifications
| Condition | New & Original, tested |
|---|---|
| Country of origin | Contact us |
| Marking Code | Send by email |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220F |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 4.5A, 10V |
| Power Dissipation (Max): | 51.4W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-220-3 Full Pack |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 9A (Tc) 51.4W (Tc) Through Hole TO-220F |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Email: | [email protected] |
Related parts for GP1M009A060FH
Latest News
- Ansonmei launched an inductive position sensor for the industrial and transportation market
- Ruisa starts the old factory to increase the power device, the earthquake affects DRAM output mild
- Microchip enables the production capacity of TSMC and increases price increases
- Ruisa launched the new RA0 series ultra -low power entry -level MCU
- Melexis launches a full -integrated inductor switch chip
- X-FAB introduces image sensor back illumination technology to enhance CMOS sensor performance
- The large chip factory was affected by the earthquake: TSMC stopped working urgently, exacerbating the GPU supply in short supply?
- NAND flash memory continues, MCU destocking bottom is right
- Under the AI air outlet, the two major chip giants are "not strong": smashing the money to break the game, bet on 2025 team battles
- Toshiba launches SmartMCD series gate driver IC with embedded microcontroller
- Samsung: Face the challenge of the two major areas, raise funds to break the situation
- The mature margin foundry reduces the price again, Samsung is independent of Nvidia HBM3E memory