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Vishay official announcement factory reorganization, Micron NAND flash memory revenue innovated high

  • Source:Network finishing
  • Release on:2024-09-27

1. 1.VishayAnnounce the reorganization plan, close the three manufacturing factories and lay off for layoffs

According to fast technology, the United States is separatedsemiconductorAnd passive component manufacturerVishay Intertechnology (Weishi Technology) announced the restructuring plan, including closing three manufacturing plants and layoffs about 800 people.According to Visha's official statement, the closed factories include in Shanghai, ChinadiodeThe packaging factory, as well as two resistor factories in Philibrag, Germany and Milwellia, Wisconsin, USA.

The closure of these factories is expected to be completed by the end of 2026, and production transfer will begin in the fourth quarter of 2025.VishayIt is expected that the reorganization will generate a pre -tax cash cost of 38 million to 42 million US dollars, mainly due to the dismissal fee, most of which will occur in the third quarter of 2024.After Visha is expected to be fully implemented, the annual cost saves at least 23 million US dollars, and immediately saves about 9 million US dollars. It will save another $ 12 million in the first quarter of 2025.

2.GloryThe revenue of 2024 fiscal year was 25.11 billion US dollars, a significant increase of more than 60 %

storageOriginal factoryGloryThe latest announcement of the fourth fiscal season 2024 (as of August 29) and the full fiscal yearFinancial reportEssence

In the fourth fiscal season, calculated according to GAAP,GloryThe revenue was US $ 7.75 billion, the last fiscal quarter was US $ 6.81 billion, and the same period last year was $ 4.01 billion; the gross profit margin was 35.3%, and the previous quarter was 26.9%.Net profit was US $ 887 million, with $ 332 million in the previous quarter, and lost $ 1.43 billion in the same period last year.

The whole fiscal year is calculated according to GAAP,GloryThe revenue was 25.11 billion US dollars, and the previous fiscal year was $ 15.54 billion; the gross profit margin was 22.4 %, and the loss of losses in the previous fiscal year was negative; net profit was US $ 778 million, and the net loss of the previous fiscal year was US $ 5.833 billion.

Source: Micron

GlorySanjay Mehrotra, the president and CEO of Technology, said that due to the strong AI demand, the company's data center DRAM and the industry's leading HBM increased, Micron achieved 93%of revenue in the fourth quarter.NAND revenue records are led by data center SSD sales, and quarterly revenue exceeds $ 1 billion for the first time.With the best competitive positioning in Micron's history, it will enter the fiscal year 2025. It is expected that the revenue of Micron in the first quarter will reach a record high. The profitability of fiscal 2025 will increase significantly, and the revenue will be recorded.

3..Zhaoyi InnovationAnnounce the GD32A7 series new -generation car regulatory MCU

Zhaoyi InnovationIt was announced on the 25th that the new -generation MCU GD32A7 series was launched.Compared with the previous generation using ARM Cortex-M4/M33, the GD32A7 series is equipped with a high-performance ARM Cortex-M7 core, providing a variety of models such as GD32A71X/GD32A72X/GD32A74X for users to choose from.

GD32A71X/GD32A72X/GD32A74X series MCU supports three options: single -core, dual -core, and single -core lock steps respectively. The main frequency is 160MHz, the computing power is as high as 763 DMIPS, and it is equipped with up to 4MB Flash and 512KB SRAM. It supports dual Flash Bank. , Can meet the seamless OTA upgrade needs.chipThe 2.97-5.5V width voltage supply can be used to operate stably within the working temperature range of -40 ° C ~+125 ° C. It meets the AEC-Q100 Grade1 standard and has a working life of more than 15 years, building a hardware foundation for the safety and stability of the system.

In order to meet the needs of diverse body, interconnection, and chassis applications, this series of products integrate a wealth of peripheral interfaces, including the 6th SENT interface; the 8th CAN FD, the 12th LIN Multi -Road High -speed vehicle interface; and supporting AVB With TSN's 1x10/100Mbps Ethernet interface; in addition, interfaces of 8 SPIs, 1 Quad SPI, I2C I2C, and I2C are also available.

4. Siruipu launches 17 channels of high precisionBatteryManagement product TPB76016

Siri 3PEAK recently launched a new 17 -channel high -precisionBatteryManagement products TPB76016, built-in high-precision benchmark, working temperature support -40 ℃ to+125 ℃, can be widely used in the BMS control board of power batteries, energy storage batteries, and other consumer batteries.

TPB76016 has multiple protection functions including integrated voltage, current, and temperature. It supports the use of internal temperaturesensorAnd up to 4 external thermal resistance to temperature detection, integrated programmingstorageThe device is used, the integrated secondary chemical fuse is driven, the built -in equilibrium MOS, while supporting external balanced pipe balance, and the 1MBPS SPI communication interface.

5.SK HylosThe first mass production 12 -layer stack HBM3E

SK Hylos It was announced on the 26th that the world's first -layer HBM3E began to produce 12 floors, and the largest 36GB capacity of the existing HBM1 products was achieved.The company will provide customers with this product within the year. Following the first time to provide customers with 8 -layer HBM3E to customers in March this year, it only shows its overwhelming technical strength after only 6 months.

The company also stacked 12 3GB DRAMchip, Realize the same thickness as the existing 8 -layer products, while the capacity increases by 50%.To this end, the company has made a single DRAM chip 40%thinner than before, and uses silicon -passing technology (TSV) technology vertically.

SK HylosIt also solves the thinning that will become thinnerchipStrueping more structural problems.The company applied its core technology advanced MR-MUF5 process to this product. The insulation performance increased by 10%compared to the previous generation, and enhanced the control of controlling, thereby ensuring stability and reliability.

6.British Fei LingExtended Optimos 6 MOSFET product portfolio

British Fei LingThrough the new 135 V and 150 V product series, its Optimos 6 MOSFET product portfolio is extended.These devices are designed to satisfyDriverThe requirements of the switch mode power supply (SMPS) and add the recently released Optimos 6 120 V MOSFET.

Compared with the previous generation (OPTIMOS 5 150 V MOSFET), the new series of the in -line resistance R DS (on) was reduced by 50%, while the FOM G was reduced by 20%.With extremely low R DS (on), improved switching performance and excellent EMI performance, these two new series provide unparalleled efficiency, power density and reliability.Fast, softer bodydiodeIt can reduce the Q RR of up to 59%, and reduce the bells.

Optimos 6 135 V and 150 V MOSFET have various encapsulation to choose from, including to-220, D 2PAK 3 stitches, D 2PAK7 stitches, TOLL, to, to, to, to,LG, Tolt, Superso8 5X6 and PQFN 3.3X3.3.

7.STAnnounce the fourth -generation SIC MOSFET technology platform, facing electric vehicle traction inverters

Deedsemiconductor(ST) It was announced a few days ago that its fourth -generation silicon carbide (SIC) MOSFET technology is being launched.The fourth -generation technology brings new benchmarks in terms of energy efficiency, power density and robustness.Be satisfiedcarAt the same time as the industrial market demand, new technologies are specially optimized for traction inverters. Directors are key components of electric vehicle power systems.As a commitment to innovation, ST plans to introduce more advanced SIC technology innovation by 2027.

STThe qualification certification of the fourth -generation SIC technology platform 750V has been completed, and it is expected to complete the 1200V qualification certification in the first quarter of 2025.The nominal rated voltage of 750V and 1200V will be put into commercial use, enabling the designer to solve the voltage from the standard AC line to high voltage electricitycarBatteryThe application of charger.

8. Creative electronic 3 nanometer HBM3E memory controller and PHY IP obtained application

According to the IT home news, Creative Electronic Guc announced that its 3nm technology HBM3E memory controller and PHY IP have been obtainedindustryImportant CSP cloud service providers and many HPC solutions suppliers are adopted. The ASIC is expected to flow this year to support 9.2Gbps HBM3E memory.Creative electronics is one of the important ASIC design service manufacturers. Its largest shareholder (35%holding shares) and the only fabal agent manufacturers are allTSMCEssence

HBM3E IP of Creative Electronics has been passedTSMCThe verification of the N7/N6, N5/N4P, N3E/N3P process is compatible with all mainstream HBM3 manufacturers' products, and streamlined verification is performed in Cowos-S and Cowos-R packaging.In addition to HBM3E, Creative Electronics is also positive and withGloryWait for HBM memory suppliers to develop HBM4 IP for the next generation of AI ASIC.