News
Ansonme accelerated silicon carbide innovation and helped promote electrification transformation
- Source:Network sorting
- Release on:2024-07-20
The latest generation Elitesic M3E MOSFET can reduce the control loss of electrified applications by 50% as much as 50% more than 50%
The platform adopts the actual verified flat architecture, which reduces the turnover loss and switching loss in a unique way.
When combined with ASEMI intelligent power product combination, Elitesic M3E can provide more optimized system schemes and shorten the time of the product listing
Ansonam announced that it plans to accelerate the launch of a number of new -generation silicon carbide products by 2030
Shanghai, China-July 19, 2024-Faced with upgraded climate crisis and rapidly growing global energy demand, governments and enterprises around the world are working hard to reduce environmental impacts for the grand climate goals. Continuous future.The key is to promote electrification to reduce carbon emissions and actively use renewable energy.In order to accelerate this global transformation goal, Ansonam (Nasdaq's stock code: ON) launched the latest generation of silicon carbide technology platform Elitesic M3e MosFet, and plans to launch multi -generation new products by 2030.
Simon Keeton, president of the Anson Mei Power Plan Business Group, said: "The future of electrification depends on advanced power semiconductors, and power innovation is critical to achieving global electrification and preventing climate change. It cannot meet the growing world of intelligence and electrification of the world. We are actively promoting technological innovation, planning to greatly increase the power density of silicon carbide technology by 2030 to meet increasing energy needs and help global electrification transformation.
In this process, Elitesic M3e MOSFET will play a key role to achieve the performance and reliability of the next generation of electrical systems at a lower cost of cost, thereby accelerating the popularization of electrification and strengthening the implementation effect.Because it can operate at a higher switching frequency and voltage, the platform can effectively reduce the power conversion loss, which is widely used in electric vehicle power systems, DC fast charging piles, solar inverters and energy storage schemes. It is important.In addition, Elitesic M3E MOSFET will promote data centers to more efficient and higher power transformations to meet the energy demand for sustainable artificial intelligence engine indexes.
The trusted platform to achieve efficiency intergenerational leap
With Anson's unique design and manufacturing capabilities, Elitesic M3e MOSFET significantly reduced the turnover loss and switching loss in the reliable and practical floor architecture.Compared with previous generations of products, the platform can reduce the turnover loss by 30%and reduce the loss loss by 50%[comparison test based on the internal and Elitesic M3T MOSFET].By extending the life of SIC plane MOSFET and using Elitesic M3E technology to achieve excellent performance, Ansonmei can ensure that the platform's solidity and stability can make it the first choice for key electrification applications.
Elitesic M3e MOSFET also offers ultra -low -conductive push resistance (RSP) and short -circuit resistance, which is very important for the main driver inverter application that occupies the SIC market.Adopting Anson's advanced separation and power module packaging, 1200V M3E nude can provide larger phase current compared with the previous Elitesic technology, which increases the output power of the same size main drive inverter about 20%.In other words, in the case of maintaining the output power unchanged, the SIC materials required for new design can be reduced by 20%, the cost is lower, and it can achieve a smaller, lighter, and more reliable system design.
In addition, Ansonmei also provides a wider range of intelligent power technology, including grid drives, DC-DC converters, electronic fuses, etc., and can be used in conjunction with the Elitesic M3E platform.Through the power switch, drive and controller's end -to -end integrated technical portfolio through these Angmei optimization and collaborative design, it can achieve a number of advanced characteristics integration and reduce the overall system cost.
Accelerate future power technology development
In the next ten years, global energy demand is expected to increase sharply, so it is important to increase the power density of semiconductors.Ansonmei actively follows the blueprint of its silicon carbide technology, from nude architecture to new packaging technology to lead the industry innovation, thereby continuing to meet the industry's demand for higher power density.
Each generation of new silicon carbide technology will optimize the unit structure to transmit larger currents in a smaller area, thereby increasing power density.Combined with the company's own advanced packaging technology, Anson Miner can maximize the performance and reduce the packaging size.By the development of Moore's Law into the development of silicon carbide technology, Ansonmei can develop multi -generation products in parallel, thereby accelerating its development roadmap, in order to accelerate the launch of multiple Elitesic products by 2030.
"With a deep experience in the field of power semiconductor in the past few years, we have continuously break through the boundaries of engineering and manufacturing capabilities to meet the growing energy needs of the world. There is a strong mutual dependence between silicon materials, devices and packaging technology.
Elitesic M3e MOSFET uses industry standard to-247-4L packaging, and the sample has been listed.
The platform adopts the actual verified flat architecture, which reduces the turnover loss and switching loss in a unique way.
When combined with ASEMI intelligent power product combination, Elitesic M3E can provide more optimized system schemes and shorten the time of the product listing
Ansonam announced that it plans to accelerate the launch of a number of new -generation silicon carbide products by 2030
Shanghai, China-July 19, 2024-Faced with upgraded climate crisis and rapidly growing global energy demand, governments and enterprises around the world are working hard to reduce environmental impacts for the grand climate goals. Continuous future.The key is to promote electrification to reduce carbon emissions and actively use renewable energy.In order to accelerate this global transformation goal, Ansonam (Nasdaq's stock code: ON) launched the latest generation of silicon carbide technology platform Elitesic M3e MosFet, and plans to launch multi -generation new products by 2030.
Simon Keeton, president of the Anson Mei Power Plan Business Group, said: "The future of electrification depends on advanced power semiconductors, and power innovation is critical to achieving global electrification and preventing climate change. It cannot meet the growing world of intelligence and electrification of the world. We are actively promoting technological innovation, planning to greatly increase the power density of silicon carbide technology by 2030 to meet increasing energy needs and help global electrification transformation.
In this process, Elitesic M3e MOSFET will play a key role to achieve the performance and reliability of the next generation of electrical systems at a lower cost of cost, thereby accelerating the popularization of electrification and strengthening the implementation effect.Because it can operate at a higher switching frequency and voltage, the platform can effectively reduce the power conversion loss, which is widely used in electric vehicle power systems, DC fast charging piles, solar inverters and energy storage schemes. It is important.In addition, Elitesic M3E MOSFET will promote data centers to more efficient and higher power transformations to meet the energy demand for sustainable artificial intelligence engine indexes.
The trusted platform to achieve efficiency intergenerational leap
With Anson's unique design and manufacturing capabilities, Elitesic M3e MOSFET significantly reduced the turnover loss and switching loss in the reliable and practical floor architecture.Compared with previous generations of products, the platform can reduce the turnover loss by 30%and reduce the loss loss by 50%[comparison test based on the internal and Elitesic M3T MOSFET].By extending the life of SIC plane MOSFET and using Elitesic M3E technology to achieve excellent performance, Ansonmei can ensure that the platform's solidity and stability can make it the first choice for key electrification applications.
Elitesic M3e MOSFET also offers ultra -low -conductive push resistance (RSP) and short -circuit resistance, which is very important for the main driver inverter application that occupies the SIC market.Adopting Anson's advanced separation and power module packaging, 1200V M3E nude can provide larger phase current compared with the previous Elitesic technology, which increases the output power of the same size main drive inverter about 20%.In other words, in the case of maintaining the output power unchanged, the SIC materials required for new design can be reduced by 20%, the cost is lower, and it can achieve a smaller, lighter, and more reliable system design.
In addition, Ansonmei also provides a wider range of intelligent power technology, including grid drives, DC-DC converters, electronic fuses, etc., and can be used in conjunction with the Elitesic M3E platform.Through the power switch, drive and controller's end -to -end integrated technical portfolio through these Angmei optimization and collaborative design, it can achieve a number of advanced characteristics integration and reduce the overall system cost.
Accelerate future power technology development
In the next ten years, global energy demand is expected to increase sharply, so it is important to increase the power density of semiconductors.Ansonmei actively follows the blueprint of its silicon carbide technology, from nude architecture to new packaging technology to lead the industry innovation, thereby continuing to meet the industry's demand for higher power density.
Each generation of new silicon carbide technology will optimize the unit structure to transmit larger currents in a smaller area, thereby increasing power density.Combined with the company's own advanced packaging technology, Anson Miner can maximize the performance and reduce the packaging size.By the development of Moore's Law into the development of silicon carbide technology, Ansonmei can develop multi -generation products in parallel, thereby accelerating its development roadmap, in order to accelerate the launch of multiple Elitesic products by 2030.
"With a deep experience in the field of power semiconductor in the past few years, we have continuously break through the boundaries of engineering and manufacturing capabilities to meet the growing energy needs of the world. There is a strong mutual dependence between silicon materials, devices and packaging technology.
Elitesic M3e MOSFET uses industry standard to-247-4L packaging, and the sample has been listed.